2024 年 144 巻 8 号 p. 319-324
Thin-film magnetoimpedance element utilizes impedance change based on ferromagnetic resonance and skin effect via magnetic permeability change when a magnetic field is applied. The impedance change ratio about 400% has been achieved with a film thickness of a few µm around 1 GHz. In this paper, we systematically investigated the impedance change in the GHz range and clarified that the impedance change ratio depends on the element dimensions and that it is due to the contribution of reactance portion. In addition, the dependence of the impedance change ratio on element dimensions can be explained qualitatively based on magnetic field simulations, which also indicates a possibility of quantitative estimation.
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