ゾル-ゲル法によって作製されたTiO₂薄膜の電気的特性

抄録

TiO₂ thin film was prepared by sol-gel method using a metal alkoxide [Ti(O-i-Pr)₄ tetra isopropoxisi titanium; TIPT]. The crystalline form of the film is changed by the condition for preparing sol and heat treatment temperature. When the ratio (γ) of H₂O to TIPT is 7, the crystalline phase is found at 400°C. On the other hand, for γ=2 it is found at 500°C. The crystalline form was anatase for both γ=2 and γ=7. It was found that the electrical conductivity of TiO₂ film increased with increasing the heat treatment temperature.