Abstract
Organic silicate materials such as TEOS are attracting attention as new silicon sources because of better film quality, excellent step coverage in particular, in atmospheric pressure CVD as well as low pressure (high temperature) CVD and plasma CVD. In AP CVD, addition of ozone (O3) lowers deposition temperatures to around 400°C, and the CVD reaction is thermal (chemical). TEOS/O3 AP-CVD is now well known for very good conformality. Deposition rate of the CVD depends on base materials to be deposited on. On thermal oxide deposition rate is lower and film quality is poorer than on silicon. These facts can be attributed to that the CVD reaction is rate-limited by a surface reaction. Characteristics of TEOS, OMCTS and HMDS/O3 CVD are discussed centering on the base material dependence, which is related to hydrophile of base materials and structure of the organic silicon materials. Two step deposition method is proposed to improve quality of the film deposited on thermal oxide.
