抄録
The ZrO2 thin films were prepared by sol-gel method using metal alkoxide [Zr(O-n-Bu)4]. These films were monoclinic crystalline phase ZrO2 which can't be prepared by general method. The electrical properties of ZrO2 thin film show good electrical insulation ones. It seems that the ZrO2 film's breakdown occurs by the electron avalanche from the following results: ∂EB/∂T_??_0 and ∂EB/∂d<0. The ZrO2 thin film is expected as the capacitor and coating for insulating film.
