Abstract
Monte Carlo Simulation of a-Si: H thin film growth deposited by plasma CVD are carried out to examine the morphology model of a-Si: H in the terms of film groth reaction, etching reaction by atomic hydrogen and surface diffusion of silane radicals along the surface. A model have been proposed by us(1) based on various experimental facts in which the morphology of a-Si: H consists of Si cluster regions and Si-H alloy regions. Experimentally, cluster regions seem to increase and alloy regions decrease with increasing substrate temperature, respectively. The simulated results about the hydrogen content and graphics turned out to support our proposed model. The physical phenomena depending on substrate temperature such as Staebler-Wronski effect and carrier drift mobility can be explained well by the results of this Monte Carlo Simulation.
