抄録
Refractory compound thin films of transition metal nitrides, carbides and silicide were prepared on alumina substrates. Their temperature dependence of electrical resistance were investigated at elevated temperature. The maximum temperature Tc at which the films were stable in air were 200-400°C lower than those in poor vacuum (-10-1Torr). The nitrides of tantalum, hafmium and titanium had generally wide temperature range of ohmic properties in air than their carbides, and Tc of the nitride are generally 100-200°C higher than those of carbides. The nitride and carbide of zirconium were found to have poor ohmic properties and low Tc. On the other hand, titanium silicide films had stable ohmic properties below 900°C in air, however its temperature coefficient of resistance was found to have higher value which was comparable to that of platinum.
