IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Effect of Temperature on Static Friction Characteristics for Silicon Wafer/Silicon Wafer Contact
Shigeru WatanabeMasafumi SuzukiNoboru YoshimuraHiroyuki Fujita
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1994 Volume 114 Issue 2 Pages 168-172

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Abstract

Silicon wafer is often used for a micromachine because of its excellent mechanical characteristics. However, silicon shows a large adhesive force at a high temperature, so it is predicted that a movement of micromachine would get worse with increase of a temperature. Therefore, it is necessary to understand the effect of the temperature on static friction for silicon wafer and it is also necessary to reduce an adhesive force at a high temperature.
In the present study, static friction coefficients of silicon wafer against silicon wafer, SiO2 and Al thin films were measured by using a milimeter sized mover at the temperature from 20°C to 200°C. We also measured an adhesive forces of silicon wafer against silicon wafer, SiO2 and Al thin films with increasing a temperature.
It was found that the static friction coefficient of silicon wafer against silicon wafer was increased with the increase of the temperature. This caused by the increase of the adhesive force between silicon wafers. However, if we depositted an SiO2 and Al thin films on the surface of a silicon wafer with the thickness over 100nm, the frictional force did not vary the temperature and those showed an almost constant small value.

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© The Institute of Electrical Engineers of Japan
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