1994 Volume 114 Issue 6 Pages 476-480
NbCxN1-x thin films were prepared on glass substrates by reactive sputtering in a mixture gases of Ar, CH4 and N2 using Niobium plate as a target. The substrate temperature was varied in the high temperature range from 500 to 900°C. Structural properties were investigated by X-ray diffraction. Preferred orientation was observed for the thin films deposited at the substrate temperature of 800°C. Thin films had smooth surface and high mechanical hardness. The Vickers hardness of NbC and NbCxN1-x thin film was about 1150 and from 600 to 700, respectively. The electrical conductivity of thin film was 1.0×104[S/cm]. The highest turn on temperature of 16.2 [K] was observed for the NbCxN1-x thin film. These properties are of importance for the fabrication of NbCxN1-x superconducting devices.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan