IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Current Source Characteristics in Series and Parallel Connection of MIM of LB Heterofilms
Taro HinoShigeru Takeuchi
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Keywords: MIM
JOURNAL FREE ACCESS

1995 Volume 115 Issue 12 Pages 1197-1202

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Abstract
In the present paper, MIM structures of LB heterofilms based on LB Heterofilms of arachidic acid LB films (C20) and 2-pentadecyl-6, 7', 8, 8'-TCNQ LB films (TCNQ) were deposited on the slide glass of microscope as follows.
Al/C20(4L)/TCNQ(4L)/C20(4L)/Al
Here, 4L indicates the number of monolayers, namely 4 monolayers.
It has been well known that voltage is generated in such a MIM structures, and voltage generation seems to be due to chemical reaction in LB films. However, it is suggested in our investigation that the cause of voltage generation is diffusion of electrons in LB films.
In the pressent paper, it is shown that the series and parallel connection cheracteristics of the present MIM structures can be explained by the equivalent circuit of the MIM expressed by current source and resistance.
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© The Institute of Electrical Engineers of Japan
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