パルスYAGレーザデポジション法による窒化ボロン薄膜作製

抄録

Baron nitride films were deposited on Si (100) substrates by using a pulsed YAG laser to ablate hBN and cBN-Co alloy targets. The composition of the BN film depends on the nitrogen gas pressure. Auger Electron Spectroscopy shows that the stoichiometric BN films are obtained under the conditions; a laser fluence of 3.8 J/cm², the substrate temperature of 650°C and nitrogen gas pressure of 10.0 Pa. Addition of argon gas to the reactant nitrogen gas and an RF bias enhances the formation of the cubic BN phase. Fourier Transform IR reflection spectroscopy shows that argon ion bombardment by the RF bias is effective for the formation of cBN films. This is the first report that the cubic BN phase is formed by the pulsed YAG laser deposition with an RF bias. Optical emission measurement of the hBN plasma plume indicates the presence of N₂ and B, with no strong evidence of molecular BN emission. The hBN target in this process seemed to be mainly ablated as an atomic state.