YIG Film for a Magnetostatic Wave (MSW) Device with a Ultra-small Frequency Drift

Masayuki Tanno; Toshihiko Ryuo; Mitsuo Nakazawa

doi:10.1541/ieejfms1990.115.6_527

Masayuki Tanno, Toshihiko Ryuo, Mitsuo Nakazawa

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JOURNAL FREE ACCESS

1995 Volume 115 Issue 6 Pages 527-533

DOI https://doi.org/10.1541/ieejfms1990.115.6_527

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Published: May 20, 1995 Received: November 01, 1994 Available on J-STAGE: July 15, 2008 Accepted: - Advance online publication: - Revised: -
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Date of correction: July 15, 2008 Reason for correction: - Correction: DTRECEIVED Details: Wrong : 19940525
Right : 19941101

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Date of correction: July 15, 2008 Reason for correction: - Correction: PDF FILE Details: -

Abstract

A planar-type magnetostatic wave (MSW) device made from a YIG film having a weak frequency-temperature characteristics has a large possibility to be a counterpart of a YIG sphere device such as a microwave tunable oscillator. This paper aims at realizing such a temperature compensated YIG film. We searched film compositions both theoretically and experimentally. It was found that a Bi_0.15Y_2.85Fe_4.34Ga_0.66O₁₂ film grown on a (111) GGG substrate with growth induced anisotropy constant (Ku^g) of 1.4×10³J/m³, 4π Ms of 0.73×79.6kA/m, and ΔH of 1.5×79.6A/m at 9.2GHz shows an extremely small change of vertical resonance field versus temperature. That is within 3×79.6A/m between -33°C and 72°C at a constant frequency of 9.2GHz. An MSW resonator made from the Bi, Ga substituted YIG film also shows a high Q of 2, 000 at 3GHz and a Weak frequency change within 10MHz between 7°C and 74°C. The frequency drift versus temperature of the MSW resonator is less than that of a YIG shpere oscillator. Consequently, it is predicted that an MSW device made from the present material will replace the YIG sphere device.

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