Analysis of the Voltage Generated in MIM Structures of LB Heterofilms

Abstract

The MIM structures in the present investigation have the characteristics of the current source caused by diffusion of the carriers in LB heterofilms. The voltage generated in the MIM structures of LB heterofilms is analyzed by the diffusion. A relation between the voltage drop in the resistance in the outer circuit of the MIM and the value of the resistance is obtained by analysis based on diffusion of carriers. The relation mentioned above is satisfied with the experimental results.