Tetragonal zirconia films were prepared by RF sputtering on thermally grown SiO2 layer. Films were characterized by X-ray diffraction and were found to be consist of polycrystalline tetragonal zirconia. The grain size increased as increasing substrate temperature up to 700°C. The oxygen sensor was fabricated with the zirconia film. The current increased as increasing the oxygen concentration. The films deposited by this method was found to be useful as the ion conductor of a thin film oxygen sensor.
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