パルス化RF放電によるプラズマ重合アセチレン超薄膜の生成モデル

抄録

Plasma polymerization by using a pulsed rf discharge was performed for preparation of ultra thin organic film. The discharge capacitively coupled was initiated in a box-type reactor at an uniform flow of an acetylene/argon mixture gas. 2-10 nm scale ultra thin hydrocarbon film was deposited on a silicon wafer. The surface topography of the film examined by AFM appears to be pinhole free. The distribution of thickness measured by an elipsometer suggested the reaction in gas phase is significant. Therefore, the theoretical calculation was performed by using a model of radical reaction in the gas phase, and the obtained equations were fitted well to the results of experiments.