抄録
An electron-beam-excited plasma (EBEP) apparatus produces high-density processing plasma. The plasma conditions are controlled by the parameters of the electron-beam source; discharge current (ID) and accelerating voltage (VA). As an instance of the applications, titanium nitride films are deposited as functions of ID (3, 4, and 5A) and VA (80, 90, and 100V) by ion plating technique under N2 pressure of 0.1Pa. In this process, ion-beam is utilized in order to evaporate metal because ion current of the EBEP is high. Alumina (Al2O3), quartz (SiO2), and silicon [Si(111)] of 10×10mm2 are employed as substrates. The deposition time is constant of 1 hour. The films are evaluated from color, X-ray diffraction pattern, thickness and electrical conductivity. Regardless of substrate materials, the results are summarized as follows; (1) The deposited films consist of TiN and Ti2N. (2) The formation of TiN becomes more dominant than that of Ti2N as VA increases, but changes little as ID varies. (3) The film thickness increases as either VA or ID increases, and the values are up to 2μm.
Also, plasma condition is measured by spectroscopy, mass spectrometry, and Langmuir probe method. The results are surmarized as follows; (1) As VA increases, N2 dessociates, and then N+ in plasma markedly increases, but as ID increases, the energy of particles in the plasma changes little. (2) The plasma density increases as either VA or ID increases.
From these results, it is found that the film composition and the deposition rate depend on the energy of particles in the plasma and the plasma density, respectively.
