Evaluation of Characteristics of BaTiO₃ Thin Films prepared by Intense, Pulsed, Ion-Beam Evaporation

Abstract

Cubic barium titanate (BaTiO₃) thin films have been successfully prepared in situ on the substrate of Al/SiO₂/Si(100) or SiO₂/Si(100) by intense, pulsed, ion-beam evaporation technique without heating the substrate. The energy of the ion beam used was typically 1.3 MeV with the power density of 0.6GW/cm². The deposition rate was observed to be 0.6μm/shot on the substrate placed at the distance, 4cm, from the target. The films prepared were cubic polycrystals and the composition are equivalent to that of the target. The specific dielectric constant was typically observed to be 40 at 1kHz. Relaxation time of dielectric palarization was found to distribute ln the range of 0.3-0.0003s.