Electrical Properties of Rutile-type TiO_x Thin Films Prepared by Ion Beam Assisted Reactive Deposition Method

Abstract

Rutile-type TiO_x films were deposited on glass substrates at substrate temperatures as low as 150°C by the ion beam assisted reactive deposition (IBARD) method. Ar⁺ ion bombardment at 10keV during Ti evaporation in an oxygen atomosphere was essential to achieve stoichiometric TiO₂ having a high electrical resistivity (1010Ωcm). Optimum Ar+ ion current density was found to be 20μA/cm², whose flux, 10¹⁴atoms/cm², was of the same order as the growing atom flux 10¹⁴ atoms/(cm²s) estimated from the deposition rate of 0.05nm/s.