Abstract
InSb thin films were prepared on mica substrates by conventional vacuum evaporation with suitable temperature programming for source and substrate, and their electrical properties were investigated. Though the deposited films had InSb-In structure due to the loss of antimony during evaporation, the films prepared by zone refined InSb source material with lower deposition rate obtained p-type conduction. The films showed dendritic crystal regrowth, and obtained high mobilities of electron and hole respectively. The acceptor impurities were the residual impurities originally included in In and Sb source materials which had high segregation constants during the zone refining process. The p-InSb films showed n-type conduction at room temperature range, and the high electron mobility was available for many practical devices.
