MOMBE成長窒素ドープp型ZnSeのC-V測定による評価

抄録

p-Type doping in ZnSe is one of the important research subject to realize blue lasers. Capacitance- voltage (C-V) measurements are frequently used to characterize grown p-ZnSe. However, there remains a problem in C-V measurements where measured capacitances decrease with measurement frequencies. In this paper, this problem was studies with a realistic equivalent circuit. Our main findings are following: For low-doped samples that have low leakage current, the depletion layer capacitance is accurately measured at frequencies lower than 10kHz considering electrode geometry. For high-doped samples that have higher leakage current, the depletion layer capacitance is usually underestimated and our analysis is necessary to accurately estimate the net acceptor concentration. The net acceptor concentration of-1×10¹⁷cm^-3 was realized in p-ZnSe grown by MOMBE.