Photochemical etching (PE) treatment was performed on thick porous silicon (PS) after prepared by using anodization technique. The depth profile of photoluminescence (PL) was measured for these of PE treated PS wafer. The PL of PS without PE treatment was observed at near surface, however, this luminescence region was transferred from the surface to PS/Si substrate interface by the increase in the PE treatment time.
PS morphology and crystallinity were evaluated by scanning electron microscope (SEM) and Raman spectroscopy, respectively. It was clarified that PS had cylindrical pores, which consisted of honeycomb structure holding crystallinity, filled with microparticles inside of them. It was concluded that although the microparticle regions dominated the PL of PS, these were etched from the surface by PE treatment and then PL region shifted from the surface toward the PS/Si substrate.
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