Abstract
Thin films of magnesia stabilized zirconia (MSZ) for solid oxide fuel cell (SOFC) were prepared on Si (100) substrate by plasma-enhanced chemical vapor deposition (PECVD) using zirconium alkoxide, Zr(0-nBu)4, and magnesium acetyl-acetonate, Mg(C5H7O2)2. It is seen from Plasma spectroscopic measurement that the oxygen radical produced in a reduced pressure of 0.2 mTorr can be sufficiently facillitated the elimination and adsorption reactions of organometallic compounds. MSZ fi1m was obtained at deposition pressure of 0.5 mTorr and substrate temperature of 400°C by PECVD of Zr(O-nBu)4 and Mg (C5H7O2)2, which were transported with nitrogen carrier gas. Furthermore, this film was grown in a columnar structure with deposition rate of about 12nm/min. It is also found that when MSZ film was annealed at temperature ranges from 600°C to 1000°C, it has Partially stabilized zirconia (PSZ) structure without Phase transition to a monoclinic Phase.
