IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
High Resolution Thin Film Magnetic Sensor Using Magneto-Impedance Effect
Hideya YamaderaYuji NishibeTakeshi MorikawaYutaka Nonomura
Author information
JOURNAL FREE ACCESS

1998 Volume 118 Issue 6 Pages 689-694

Details
Abstract
A Magneto-Impedance (MI) effect was found in CoSiB/Cu/CoSiB thin film elements fabricated by RF magnetron sputtering. In these elements very large impedance change ratios were achieved when an external magnetic field was applied to the longitudinal direction. These ratios were much higher than those of any other element with MI effect. Therefore, it is useful for the high resolution direction sensing .
Content from these authors
© The Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top