Rare-earth-doped SiO₂ Films Prepared by Plasma-enhanced Chemical Vapor Deposition -Development of Deposition Method and Application of Its Luminescence to Research in Physics-

Abstract

Rare-earth-doped thin SiO₂ films were made by plasma-enhanced chemical vapor deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence from the film was detected. Furthermore, by making a two-layered sample consisting of the terbiumdoped SiO₂ film and non-doped SiO₂ film or fluorine-doped SiO₂ film and by examining the electroluminescence intensity, it was found that the acceleration of electrons by electric field is difficult in the fluorine-doped SiO2 film.