Abstract
SiO2 thin films derived by sol-gel method were fabricated on silicon wafer by means of dip coating. Investigations on the physical and chemical effects of heat treatment and electrical properties of the heat-treated films were carried out by FTIR spectroscopy, ellipsometry, etch-rate measurement, dielectric properties and resistive properties measurements as well as dielectric breakdown measurement. During heat treatment, it was found that a purification and densification process occurred simultaneously and had significant effects on the electrical properties of the films. Samples treated at 600-700°C showed respectable dielectric and bulk resistive properties. However, no obvious improvement was achieved beyond heating over 700°C. On the other hand, dielectric breakdown strength and surface resistivity were enhanced by increasing the temperature of heat treatment from 600°C to 900°C. These results were discussed to find out the relationship between heat treatment and the electrical properties of sol-gel SiO2 thin film.
