抄録
During TiN thin films deposition by PLD in nitrogen ambient gas, high voltage negative pulses of -4kV to -8kV and 20μsduration were applied synchronously with the laser to a substrate holder as used in PIII. Effects of the high voltage pulses on theplasma plume were investigated by measuring the ion current to the holder and emission spectra from the plasma plume. A bulkvelocity and density of Ti+ were estimated to be 1.6×1O4m/s and 6×1011cm-3, respectively. A delay time between laser incidenceand H. V. pulse application could change the ion current to the substrate due to drift of Ti+ and nitrogen ions. It seems useful tochange N to Ti atomic composition ratio in the film. Emission spectra from the plume showed that main species ejected from thetitanium target was Ti+. Nitrogen molecule ions N2+ were produced by the collisions between N2 and high energy Ti+.Characterization analyses of the deposited films showed that H. V pulses applied to the substrate holder increased N atom composition ratio of the film and slightly improved the crystallization of the film.
