抄録
Nitrogen implantation by plasma-based ion implantation with a negative voltage of 10 kV, a pulse width of 10 μs and a repetition rate of 100 Hz leads to formation of AIN on the surface layer of an aluminum alloy (Al-7Si) target. The AES analysis of the ion-implanted samples annealed at 400°C for 1 hour shows that there is little diffusion of oxygen at the top surface of the sample into the inside of the sample, indicating an enhancement of high-temperature oxidation resistance by AlN layer formation.
