Characteristics of AlN Thin Films prepared by Pulsed Laser Ablation

Abstract

Crystallized AlN thin films have been successfully prepared by pulsed laser deposition. In particular, the roughness on the film surface has been studied. The roughness has been found mainly due to the droplets and precipitates. It is found that droplets remain in the film and that precipitates grow from the film. With increasing substrate temperature, precipitates do not appear and the film surface becomes smoother. However, many precipitate nucleuses remain in the film. Relative dielectric constant of the film is typically 9.4 at 1 MHz.