Preparation of Fullerene Thin Films by Ion Plating and Transmittance Analysis

Abstract

Fullerene thin films were prepared by conventional vacuum evaporation deposition and by ion plating with no bias, +200 V and -200 V bias applied. Weak C₆₀ (420) and (664) peaks were detected from X-ray diffraction patterns of all the films. Transmittance spectra showed that the transmittance of all the films was more than 95% in the infrared region, whereas there were some broad absorption spectra at 221, 271, 347 and 476 nm. The shape of the absorption spectra for the films prepared with no bias and -200 V were similar, and weaker and broader than those prepared by evaporation deposition. The spectra for the prepared with +200 V became much weaker and broader.