IEEJ Transactions on Industry Applications
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
Paper
Temperature dependence of On-state characteristics, and Switching characteristics of 5kV class 4H-SiC SEJFET
Katsunori AsanoToshihiko HayashiDaisuke TakayamaYoshitaka SugawaraSei-Hyung RyuJohn W. Palmour
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2005 Volume 125 Issue 2 Pages 147-152

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Abstract
A normally-off type 5kV class 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation is realized at the temperature from RT to 600K. A very fast switching time of the 4H-SiC SEJFET are realized. The turn-on time at RT is 20ns and the turn-off time at RT is 47ns. In this SEJFET, temperature dependences of the output characteristics and transfer characteristics are evaluated. Its specific on-resistance has a large positive temperature dependence, and its transconductance has a large negative temperature dependence.
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© 2005 by the Institute of Electrical Engineers of Japan
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