抄録
A Novel 4H-SiC SEMOSFET (Static channel Expansion MOSFET) was developed. This SEMOSFET has buried gate in addition to MOS gate. By applying a buried gate voltage of less than built-in potential, its channel can be expanded and low specific on resistance was realized. Developed 4H-SiC SEMOSFET has a high performances, such as high blocking voltage, BV, of 5020V, low specific on-resistance, “RonS" of 88mΩcm2 and switching speed of less than 35ns. In all reported FETs with MOS structure, the SEMOSFET has the best trade-off between RonS and BV and the largest figure of merit of 286MW/cm2. Its RonS is about 1/140th that of the theoretical limit of Si MOSFET for this BV.
