Abstract
Novel exact MOSFET switching loss analysis and formulation methods have been proposed for designing high output power density converters. To analyze influences of circuit stray parameters on MOSFET switching loss with experiments, a parameter adjustable circuit board has been fabricated. The circuit board has a function to vary circuit stray inductance and capacitance values like a circuit simulator. Correlations between MOSFET switching loss energies and circuit stray parameters are successfully analyzed with the circuit board. Based on the analysis results, switching loss energies are formulated with empirical equations to establish a exact power loss calculation tool for the converter design. Switching loss energies caused by semiconductor device parameters are modeled by a capacitance charge/discharge model. The procedure to formulate the switching loss energies with empirical equations is presented. Switching loss energies calculated with empirical equations are verified with measurements, and high accuracy of more than 95% has been achieved.
