2008 Volume 128 Issue 7 Pages 901-909
In this paper two bi-directional DC-DC converters for a 1MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density. One DC-DC converter applies commercially available Si-devices and the other one high voltage SiC switch, which consists of a SiC JFET cascode (MOSFET+1 JFET) in series with five SiC JFETs.
In the comparison also the high frequency, high voltage transformer, which ensures galvanic isolation and which is a core element of the DC-DC converter, is examined in detail by analytic calculations and FEM simulations.
For validating the analytical considerations a 20kW SiC DC-DC converter has been designed in detail. Measurement results for the switching and conduction losses have been acquired from the SiC and also for a Si system for calculating the losses of the scaled 1MW system.
The transactions of the Institute of Electrical Engineers of Japan.C
The transactions of the Institute of Electrical Engineers of Japan.B
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan
