抄録
A MOSFET structure called a FITMOS (Floating Island and Thick Bottom Oxide Trench Gate MOSFET) that exhibits a record low loss in the 60V breakdown voltage (BVdss) range has been successfully developed. The following improvements achieved progress in the characteristic of FITMOS. (1) At the time of AC operation, the charges in the floating P islands that are a feature of the floating type device become greater, thereby increasing the on-resistance (Ron) due to the JFET effect. This issue was solved by forming passive hole gates in the end walls of the trenches. The Ron under AC operation is equivalent to the Ron under DC operation. This paper clarified the influence of the passive hole gate diffusion layer shape and the impurity concentration to BVdss and AC operation. (2) The trade-off of BVdss and Ron has been improved by making the floating island into an elliptical form. A BVdss of 83V and a specific on-resistance (RonA) of 36mΩmm2 were obtained.
