IEEJ Transactions on Industry Applications
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions
Shoji OkamotoTakeshi HoriguchiShinji TominagaTadashi NishimuraHideaki FujitaHirofumi AkagiShin-ichi KinouchiTakeshi Oi
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2014 Volume 134 Issue 10 Pages 853-862


This paper presents a protection circuit for a fault under load (FUL). The protection circuit is characterized by the reverse transfer capacitance characteristic of IGBTs. The reverse transfer capacitance depends on the collector-emitter voltage and has a significant influence on the switching behavior under short-circuit conditions and normal conditions. An FUL is detected by monitoring a gate current because the current flows through the reverse transfer capacitance of IGBTs from the collector terminal to the gate terminal under FUL conditions. A physics-based IGBT model shows high accuracy for both static and dynamic characteristics, making it useful for developing a protection circuit for IGBTs subjected to short-circuit conditions. Simulated results using the physics-based IGBT model and experimental results verify the validity of the proposed protection circuit.

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© 2014 by the Institute of Electrical Engineers of Japan
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