IEEJ Transactions on Industry Applications
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
Paper
Development of 600V Driver IC for Large-Current IGBT Using New Short-Circuit Protection
Katsumi IshikawaMasataka SasakiSatoshi Ogasawara
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2014 Volume 134 Issue 9 Pages 807-814

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Abstract
This paper deals with the development of a 600V high-voltage half-bridge gate driver IC used to drive large-current IGBT (insulated gate bipolar transistor) inverters such as those used in HEVs (hybrid electric vehicles). In order to improve the robustness of a short-circuit operation, a new short-circuit protection circuit is proposed. Furthermore, a reduction in the short-circuit current is observed. Thus, the developed high-voltage IC can drive almost all types of IGBT modules up to 400A/600V.
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© 2014 by the Institute of Electrical Engineers of Japan
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