抄録
Switching characteristics of the power semiconducter device, IGBT were tested and discussed through the structure of IGBT as well as the circuit simulation. The IGBT has been considered as a very useful device because of its small input power and low on-resistance which is recently applied on power conversion systems.
Under these circumstances its switching characteristics should be recognized presicely and the principles to application on the real circuits are also necessary. It was made clear that the electric ocsillation or voltage spike across the device would occur by the stray inductances located at the lead wires and sometimes that would be harmful.
