1996 Volume 116 Issue 9 Pages 903-909
Recent development in power semiconductor devices has made remarkable advances in power electronics. Among them, the gate turn-off thyristor (GTO) is one of the most important devices. The carrier life-time controlled device has been proposed recently to realize low turn-off switching loss. So, the computer simulation for the device is now necessary to predict its characteristics.
In this study, we simulated carrier life-time controlled GTO by FEM program. The life-time control, such as heavy metal diffusion and electron beem irradiation, showed trade-off relation between on-state and turn-off condition. The partial life-time control, which generates lattice defects by light ion irradiation locally, showed the possibility to reduce turn-off loss and improve the trade-off relations. Furthermore, the numerical inner analysis showed relations between the location of the radiated point and variations of inner carrier distributions.
The transactions of the Institute of Electrical Engineers of Japan.C
The transactions of the Institute of Electrical Engineers of Japan.B
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan