A Reverse Conduction Static Induction Thyristor Model for Circuit Simulation

Abstract

In a field of simulation concerning semiconductor power devices, there are process simulation, device simulation, circuit simulation. These simulations are selected for their purpose. In order to analyze static and dynamic phenomena of semiconductor power devices or passive devices, and to support the design of power conversion systems, many circuit simulation models of semiconductor power devices such as GTOs, IGBTs, Thyristors are fabricated.
In this paper, a reverse coducting static induction thyristor model is proposed. The model is made up of SI thyristor model with two transistor analogue and diode model with SPICE internal diode, capacitance and resistance. For confirming the accuracy of this circuit model, some experiments are carried out. As a result, good agreement are shown between the measured and calculated results.