Performance Enhancement of an Integrated SiC JFET and GaN HEMT 5-kW T-Type Inverter for Vehicle-to-Grid and Grid-to-Vehicle Technology

Abstract

This study investigates the performance of wide-bandgap-based devices integrated into a bidirectional T-type inverter topology for vehicle-to-grid (V2G) and grid-to-vehicle (G2V) applications. The designed structure incorporates wide-bandgap semiconductor devices, specifically, 1700V-rated SiC JFETs and 650V-rated GaN HEMT, operating at a 100-kHz switching frequency. This high frequency enhances the parameter performance and increases the power density. The analysis focuses on three main factors: first, the switching states of the devices in a 5-kW DC-AC bidirectional inverter controlled in real-time; second, the efficiency of a traction inverter with a buck and boost DC-DC converter operation for grid-connected electric-vehicle applications; and finally, the losses of overall combined primary switching and conduction losses of wide-bandgap devices. The system improves the efficiency to 98.09% with a combined SiC and GaN traction inverter. Simulations were conducted in the MATLAB/Simulink environment, and OPAL-RT results are presented to validate the performance of the designed T-Type three- phase 3L inverter structure.