IEEJ Journal of Industry Applications
Online ISSN : 2187-1108
Print ISSN : 2187-1094
ISSN-L : 2187-1094
Special Issue Paper
A Meta-Parameterized Approach for the Evaluation of Semiconductor Technologies
—A Comparison between SiC-MOSFET and Si-IGBT Technologies—
Rene Barrera-CardenasTakanori IsobeMarta Molinas
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2018 Volume 7 Issue 3 Pages 210-217


This paper presents a meta-parameterized approach for the evaluation of Power Switch Modules (PSMs) in power converters. General models and parameters for the evaluation of power losses and volume of a PSM are presented. Then, meta-parameterization is performed for two semiconductor devices that have been successfully commercialized for low/medium power converters, Si-IGBTs, and SiC-MOSFETs. A comparative analysis based on the efficiency and power density of the considered technologies is presented. A bidirectional non-isolated DC-DC converter topology is considered as application example in order to show how meta-parameters can be used in comparative studies to optimize device selection.

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© 2018 The Institute of Electrical Engineers of Japan
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