The Journal of The Institute of Electrical Engineers of Japan
Online ISSN : 1881-4190
Print ISSN : 1340-5551
ISSN-L : 1340-5551
SPECIAL ISSUE on Crystal Engineering for Power Semiconductor Devices —Si, SiC, GaN, Diamond, Gallium Oxide—
Crystalline Diamond Substrates for Power Devices
Tokuyuki TERAJI, Yasuo KOIDE
Author information
JOURNAL FREE ACCESS

2017 Volume 137 Issue 10 Pages 689-692

Details
Download PDF (592K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
[in Japanese]
Content from these authors
© 2017 The Institute of Electrical Engineers of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Announcements from publisher
  • A member of IEEJ can access the Journal of the Institute of Electrical Engineers of Japan. Please enter the My Page login ID in the subscriber number column and the birth date (year/month/date with one-byte characters: for example, 19800303) in the password column.
Predecessor

The Journal of the Institute of Electrical Engineers of Japan

Related information

https://www.jstage.jst.go.jp/browse

Related journals
IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Power and Energy
IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Industry Applications
IEEJ Journal of Industry Applications
IEEJ Transactions on Sensors and Micromachines
IEEJ Transactions on Electrical and Electronic Engineering
Share this page
feedback
 Top