パワーデバイス用Ga2O3結晶

The Journal of The Institute of Electrical Engineers of Japan

Online ISSN : 1881-4190
Print ISSN : 1340-5551
ISSN-L : 1340-5551

SPECIAL ISSUE on Crystal Engineering for Power Semiconductor Devices —Si, SiC, GaN, Diamond, Gallium Oxide—

Ga₂O₃ Crystal for Power Device

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Keywords: Ga₂O₃, MIST EPITAXY^®

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2017 Volume 137 Issue 10 Pages 693-696

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[in Japanese]

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