抄録
This paper describes the development of surge arrester of GIS for non-effectively ground system. The surge arresters are developed by the improvement of the manufacturing of the praseodymium ZnO elements. The improvements include the new additive and the new process of production . Reference voltage per unit thickness attained 300V/mm owing to the fine-grain ZnO.
Therefore the residual voltage of the arrester reduced 25% for 154kV class arresters and 15% for 66kV. It is important to check the long duration thermal stabilty and the temporary over voltage discharge capabilty. The long duration thermal stabilty contained 3D-electric field analysis and the voltage distribution test with the aid of the optical-electrical transducer.
The surge arresters have lower residual voltages that attain lower insulation level for GIS.
