Non-uniformity in the Electrical Properties of Aluminum Added Silicon Carbide Ceramics

Abstract

Effects of aluminum (Al) addition on variations in electrical properties of silicon carbide (SiC) ceramics were investigated. In this study, SiC ceramics added Al in the range from 0 to 0.6 mass% were sintered at 2273 K for 1 hour. The resistance (R) and thermistor constant (Bt) were measured, through which their averages and variations were obtained. As the amount of the Al addition increased, the variations of R and Bt increased. It was suggested that the increase of the microstructural variation causes the increase of the electrical variation in SiC ceramics.