Low Temperature Preparation of Functional Oxide Thin Film by Sol-gel - Hydrothermal Process

- Application to Si ULSI Monolithic Process for Large-Scale Integrated Sensor, Actuator, and Memory -

Abstract

A very low-temperature process for preparation of functional oxide thin films is newly proposed and examined by sol-gel-hydrothermal combined treatment. A series of oxide ferroelectric thin films have been prepared by the method in various mineralizer, alkaline solutions. Especially PZT film grown in KOH+Pb(OH)₂ solution at final post-baking temperature as low as 400°C, showed a well-saturated, good P-E hysteresis loop with Pr=26.3μC/cm² and Ec=40.1 kV/cm, respectively.