IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Special Issue Paper
A Dual Axis Accelerometer Utilizing Low Doped Silicon Thermistor
Van Thanh DauDzung Viet DaoMasahiro HayashidaThien Xuan DinhSusumu Sugiyama
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2006 Volume 126 Issue 5 Pages 190-194

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Abstract
This paper presents the development of a dual axis convective microaccelerometer, whose working principle is based on the convective heat transfer and thermo-resistive effect of lightly-doped silicon. Different with developed convective accelerometer, the sensor utilizes a novel structure of the sensing element which can reduce 93% of thermal-induced stress. Moreover, the thermistors are made from low-doped p-type silicon, which has the TCR higher than that of metals and poly-silicon convective accelerometer. By using numerical method, the chip dimensions and the package size are optimized. The sensitivity of the sensor was simulated; other characteristics such as frequency response, shock resistance, noise problem are also deeply investigated. The sensor has been fabricated by MEMS process and characterized by experiments.
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© 2006 by the Institute of Electrical Engineers of Japan
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