Magneto-resistance Effect of Sn-doped InSb Single Crystal Thin Films and Application to Rotation Detection

Abstract

Using Sn-doped single crystal InSb thin films of 1.0μm thickness grown on GaAs substrates by molecular beam epitaxy (MBE), we have developed new magneto-resistance (MR) elements with very small temperature dependence. These MR elements was used to form rotation detection sensors combined with bias magnet, and we can achieve the stable contactless detection of rotating gear teeth over a wide range of rotation speeds and a wide range of temperatures-20 to 140°C.