Application of the Spectral Sensitivity for the Semiconductor Junction Analysis

Abstract

In this report, the spectral sensitivity was used for semiconductor junction analysis. This analysis is carried out by means of a photoconduction characteristic depend on the electric field strength in the material. The light absorption and the photoconduction current are in proportion, and the electric field strength in the material is known by way of comparing the photoconduction current to the light absorption. The material has different absorption coefficients each wave lengths, and has different complete light absorption lengths. Then, it is possible to select the analysis area at the material, if select appropriate wave length. From this analysis method, the electric field strength and the potential along thickness of the material can be evaluated. This analysis method was applied to evaluate the electric field strength on the ITO-ZnSe junction, and the potential distribution and the depletion layer were evaluated. As a result, it was found that ZnSe layer had space charges near the junction.