Reduction of Damage in PZT Thin Films Derived from Wet Etching with LaNiO₃ Conductive Oxide Thin Films

Abstract

We have investigated the degradation of ferroelectric property of Pb(Zr,Ti)O₃(PZT) thin films derived from wet etching of PZT thin films. We have also investigated the reduction of the degradation with LaNiO₃ (LNO) thin films as a buffer layer between Pt and PZT thin films. The polarization and dielectric constant of the PZT thin films were reduced to about 70% through wet etching. It has found that the degradation can be avoided with LNO thin films.