IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Special Issue Paper
High Sensitivity InAs DQW Linear Hybrid Hall ICs with InAs Deep Quantum Well Hall Elements
Ichiro ShibasakiKenji KuriyamaTakashi MakinoNaoya HukasawaKenji Suzuki
Author information
JOURNAL FREE ACCESS

2013 Volume 133 Issue 10 Pages 301-306

Details
Abstract

By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and a Si IC linear amplifier in a small plastic package, a very small sized InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity was developed. The output voltage of the hybrid Hall IC showed a very small temperature coefficient of 0.02%/°C and the response time was very small at less than 3µsec. By using this InAs DQW LHHIC, practical current sensors having high sensitivity, high accuracy, and temperature stability were developed.

Content from these authors
© 2013 by the Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top